Abstract
Oxide heterojunctions composed of manganite films of different tolerance factors and SrTiO3 : Nb are fabricated and their rectifying properties are experimentally studied. The current–voltage characteristics of the junctions are found to be dominated by diffusion current at high temperatures and by tunnelling current at low temperatures. Further analyses on the rectifying behaviours of the junctions indicate the occurrence of a built-in voltage independent of manganites, despite the great resistivity change of the manganites and the metal-to-insulator transition above 350 K (for La0.67Sr0.33MnO3) and ∼87 K (for La0.29Pr0.38Ca0.33MnO3). In contrast, the increase in the Nb content causes a reduction of the built-in voltage by ∼0.2 eV. The presence of the depletion layer insensitive to the phase transition of the manganites is believed to be responsible for the present observations.
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