Rectifying behavior and photoinduced characteristic in La‐doped BaSnO3/p‐Si heterojunctions

Abstract

Photoinduced properties of Ba0.99La0.01SnO3/p‐Si heterojunctions that exhibit rectifying characteristic have been investigated. It is found that the heterojunction shows particular photoinduced characteristics at reverse bias when illuminated by violet or green light. The photocurrent rises rapidly with reverse bias but saturates beyond a critical voltage under green light illumination, whereas the photocurrent shows a linear increase with reverse bias under violet light illumination. Given the experimental results, we attribute the observed photoinduced behavior to the balancing sequence of the width of the depleted layer and the penetration depth of the laser in the heterojunction.