Abstract
We report rectification phenomena in electric field induced self-assembled thin films of DNA that were employed in the development of an ITO/DNA/Al sensor. The prototype sensor was subjected to electrical characterization involving the acquisition of current–voltage graphs. Electric field aligned DNA films exhibited reduced potential barrier of 0.780 eV while the potential barrier for non-aligned films was 0.796 eV. Similar reduction was also observed for the measured ideality factor and series resistance. This enhanced rectification following electric field induced self-assembly of DNA films may prove beneficial for generating accurate and rapid response in DNA-based devices.
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