Abstract
Hybrid organic-on-inorganic heterostructures employing phthalocyanine molecular semiconductor and doped silicon were fabricated using standard microelectronic processes. Current-vs-voltage characteristics display rectifying behavior of such heterostructures, which becomes more pronounced if n-type phthalocyanine layer is utilized. Competitive influence of phthalocyanine/metal and phthalocyanine/p-Si interface on electrical transport in the devices is discussed. Heterostructures with lead phthalocyanine layer show photoconductive properties in the NIR domain when illuminated through p-Si side.
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