Abstract
Laser single side contact formation (LSSC) and the hydrogen passivation process are studied and developed for crystalline silicon thin film (CSiTF) solar cells on graphite substrates. The results demonstrate that these two methods can improve cell performance by increasing the open circuit voltage and fill factor. In comparison with our previous work, we have achieved an increase of 3.4% absolute cell efficiency for a 40 μ mt hick 4c m 2 aperture area silicon thin film solar cell on graphite substrate. Current density-voltage (J-V ) measurement, quantum efficiency (QE) and light beam induced current (LBiC) are used as characterization methods.
Highlights
Laser single side contact formation (LSSC) and the hydrogen passivation process are studied and developed for crystalline silicon thin film (CSiTF) solar cells on graphite substrates
The results demonstrate that these two methods can improve cell performance by increasing the open circuit voltage and fill factor
In comparison with our previous work, we have achieved an increase of 3.4% absolute cell efficiency for a 40 μm thick 4 cm2 aperture area silicon thin film solar cell on graphite substrate
Summary
The SiC layer with a thickness of 10 μm was deposited using a hot-wall chemical vapor deposition, which covered both surfaces of the substrate to prevent the diffusion of impurities. For the reference substrate (Fig. 1c), the p+-Si layer had the concentration of 4×1018 cm−3 and was epitaxially grown directly onto the wafer substrate. Using plasma-enhanced chemical vapor deposition (PECVD) we deposited a silicon nitride layer with a thickness of 75 nm, which served as an antireflection coating.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
