Recrystallization process of phosphorus ion implanted 4H–SiC(1 1 2 −0)

Abstract

The recrystallization process of the phosphorus ion implantation-induced amorphous layer in 4H–SiC(112−0) is investigated in the annealing temperature range from 660 to 720°C by means of Rutherford backscattering spectrometry. The phosphorus ions are multiply implanted to p-type 4H–SiC(112−0) at the energy range from 40 to 230keV at a total fluence of 1×1015cm−2 to form the implantation layer with a phosphorus concentration of 4.0×1020cm−3 and a thickness of 200nm. The amorphous-substrate interface shifts to the surface in equal thickness intervals for equal annealing time intervals, indicating a uniform recrystallization velocity. The recrystallization rate for the phosphorus implanted 4H–SiC(112−0) is 4 times faster than that in argon implanted samples and increased with an activation energy of 3.4eV, which is identical to that of the recrystallization of amorphized 6H–SiC(112−0) and (11−00).