Recrystallization of silicon film on insulating layers using a laser beam split by a birefringent plate

Abstract

20-μm-wide, 1-mm-long, single-crystal Si films on SiO2 have been produced using a cw Ar laser beam split by a birefringent quartz plate. The single-scan recrystallized region width has been widened by multiple beam splitting. The resultant single-crystal region obtained by multiple scan from the seed is a 90-μm-wide and 100-μm-long area with rare grain boundaries. This split beam method uses the stable and highly efficient TEM00 mode and needs no prepatterned antireflection layers.