Abstract
Germanium single crystals were irradiated at room temperature by 1.5MeV energy germanium ions and high energy silver ions of 100MeV. Based on the transmission and high-resolution electron microscopic investigations, we present the experimental evidence of complete recrystallization of the amorphized germanium layer, formed by the self-ion-implantation, due to intense electronic excitations generated by the swift Ag ions. This phenomenon is observed at room temperature—far below the solid phase epitaxial growth temperature and that at which low energy ion beam induced epitaxial crystallization takes place. The results are explained in the light of local transient melting due to a high rate of energy deposition by the silver ions and its subsequent cooling. Based on the calculations on thermal spike concept in combination with the nonequilibrium thermodynamics, we obtain a reasonably good estimate for the experimental observation.
Published Version
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