Abstract
The effects of oxygen ion irradiation and subsequent thermal annealing of Bi 2Sr 2Ca 1Cu 2O x (Bi-2212) films deposited on MgO(0 0 1) by using pulsed laser deposition were studied. It was found that compared with the heated-only film, the ion irradiated and thermally annealed one showed an improved conducting behavior in the Bi-2212 phase. Our results suggest that amorphization by oxygen ion bombardment and recrystallization by thermal annealing might be a suitable process for the preparation of high-quality superconducting Bi-2212 films.
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