Abstract
A new method, experimental device and technology for large-grained CdTe film preparation are described. This method enabled to produce CdTe films with the thickness of 1–2 µm and more. Films were recrystallized on the top of 100 µm thick Mo plate and Mo/glass substrate. Phase composition of the CdTe film remained stable up to 800 °C of heating plate temperature. Due to the temperature gradient on the recrystallization area, the CdTe film stuck on the upper, low-temperature (400 °C) surface of the substrate, and an ohmic linear contact between the Mo and CdTe was achieved. Independently, face centered cubic form and large-grained CdTe film with preferable orientation (111) was formed.
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