Abstract
Re-crystallization of implanted layers and electrical activation of implanted As atoms by vacuum-ultraviolet (VUV) light irradiation in silicon substrates below 470° C were investigated by means of sheet resistance measurements and reflection high-energy electron diffraction (RHEED). The reduction in the process temperature by irradiation of VUV light onto the implanted layer at 1 Wcm-2 is estimated to be about 50°.
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