Abstract
Single crystal 6H-SiC wafers with 4° off-axis [0001] orientation were irradiated with carbon ions and then annealed at 900 °C for different time periods. The microstructure and surface morphology of these samples were investigated by grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Ion irradiation induced SiC amorphization, but the surface was smooth and did not have special structures. During the annealing process, the amorphous SiC was recrystallized to form columnar crystals that had a large amount of twin structures. The longer the annealing time was, the greater the amount of recrystallized SiC would be. The recrystallization volume fraction was accorded with the law of the Johnson–Mehl–Avrami equation. The surface morphology consisted of tiny pieces with an average width of approximately 30 nm in the annealed SiC. The volume shrinkage of irradiated SiC layer and the anisotropy of newly born crystals during annealing process produced internal stress and then induced not only a large number of dislocation walls in the non-irradiated layer but also the initiation and propagation of the cracks. The direction of dislocation walls was perpendicular to the growth direction of the columnar crystal. The longer the annealing time was, the larger the length and width of the formed crack would be. A quantitative model of the crack growth was provided to calculate the length and width of the cracks at a given annealing time.
Highlights
SiC can be used as semiconductor devices, electronic devices, optical devices, and sensors based on its unique physical and chemical properties including a wide band gap, high thermal conductivity, stable mechanical properties, and large saturation drift velocity [1,2,3,4]
SiC is one of the main candidates used as nuclear fuel cladding material and supporting shell in tri-structural isotropic (TRISO) fuel due to its perfect irradiation stability [5,6,7]
Ion implantation is a kind of great method to dope impurities in SiC microelectronic devices [8], but high dose energetic ions could result in SiC amorphization at room temperature [9,10]
Summary
SiC can be used as semiconductor devices, electronic devices, optical devices, and sensors based on its unique physical and chemical properties including a wide band gap, high thermal conductivity, stable mechanical properties, and large saturation drift velocity [1,2,3,4]. 31 P atoms have a large effect on produce the SiC properties and performance, but few studies the have influence of [30], which a lot of extra carbon atoms. These extra carbonreported atoms may a large excess carbon onproperties the surfaceand morphology andbut the few microstructure of C+ the ion influence irradiatedofSiC. 6H-SiC to simulate microstructure and surface morphology annealing was observed research the the case that extra carbon atoms exist in the of SiCSiC andafter the evolution of the internaltomicrostructure formation ofof surface cracks. SiC after annealing wasof observed to research of the relationship between recrystallization behavior in the irradiated layer and the formation of surface cracks. Recrystallization behavior in the irradiated layer and the formation of surface cracks were determined
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