Abstract
Ga 2 O 3 films were deposited on Si substrates through radio-frequency magnetron sputtering at room temperature and were annealed in situ in a high-vacuum environment. The as-deposited Ga 2 O 3 film exhibited an island-like surface morphology and had an amorphous microstructure, with a few nanocrystalline grains embedded in it. After high-temperature in situ annealing, the films recrystallized and exhibited coalesced surfaces. Because of the thermally driven diffusion of Ga, the interfacial layer between Si and Ga 2 O 3 was composed of SiGaO x . Compared with ex situ annealing in air, in situ annealing in high vacuum is more advantageous because it enhances surface mobility and improves the crystallinity of the Ga 2 O 3 films. The higher oxygen vacancy concentration of in situ annealed films revealed that oxygen atoms were easily released from the Ga 2 O 3 lattice during high-vacuum annealing. Photoluminescence (PL) spectra exhibited four emission peaks centered in ultraviolet, blue, and green regions, and the peak intensities were significantly enhanced by thermal annealing at >600 °C. This work elucidates the effect of the in situ annealing treatment on the recrystallization behavior, interfacial microstructure, oxygen vacancy concentration, and PL performance of the Ga 2 O 3 films, making it significant and instructional for the further development of Ga 2 O 3 -based devices.
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