Abstract
This paper describes the effects of recovery processes for the degradation caused by chemical mechanical polishing (CMP) in the integration of Cu/porous silica low- material interconnects , in which is used as CMP-Cap film (Cap-) for film. The leakage current and capacitance between Cu damascene interconnects increased when Cap- was removed by CMP and the was exposed, because the surfactant in CMP chemicals penetrated the and the hydrophobicity of the decreased, resulting in the increase of water absorption in the . As a result of the recovery process after CMP, the leakage current has decreased by three orders of magnitude by applying an isopropyl alcohol rinse and 1,3,5,7-tetramethyl-cyclo-tetrasiloxane (TMCTS) gas treatment, and the capacitance has decreased by 15% by applying the TMCTS gas treatment.
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