Recovery of radiation damage in neutron transmutation doped silicon by isochronal and isothermal annealing

Abstract

The recovery of the radiation damage of silicon FZ ingots, irradiated with neutrons in the Dido reactor at Harwell with a dose of 6.5 · 10 1 7 (n cm −2), has been studied by structural and electrical techniques. The study has been made on slices using the isochronal annealing method in the range 100–800°C by steps of 40°C for 30 mins duration. Five stages of recovery in the range 100–800°C have been identified. The isotherms, made at typical temperatures, have established that in the range 580–710°C, the kinetics of recovery of lattice defects are of the first order and with an activation energy of 3.47 eV.