Abstract
Abstract Measurements of electrical resistivity after low temperature fast neutron irradiation are made for amorphous Pd80Si20 and Pd80Ni2Sl18 and then Pd80Si20 annealed at 230°C and 360°C, and the isochronal annealing curves are obtained. The resistivity increase of Pd80Si20 annealed at 360°C is about 10 times larger than that of amorphous alloys and no defined annealing stage is observed in amorphous alloys and Pd80Si20 annealed at 360°C. For amorphous Pd80Si20, about 60% of the resistivity increase by irradiation remains after annealing up to room temperature and these are discussed by the structural relaxation.
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