Abstract
The reaction kinetics of the 50-K recovery stage of tellurium irradiated with 20-MeV electrons can be explained by correlated vacancy-interstitial annihilation. Moreover, the influence of the doping on the transport properties of irradiated tellurium crystals was investigated. It turned out that the assumption of a reduction of the dislocation scattering potential by vacancy trapping as proposed in previous papers is insufficient. The experimental findings are comprehensible if screening of the dislocations by free carriers is assumed to be the predominant mechanism. With this model the doping dependence of the mobility in unirradiated tellurium crystals can also be understood.
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