Abstract
An investigation was made into the room-temperature recovery behavior of lithium-drifted p+-i-n+ junctions in silicon after irradiation with 60Co gamma rays. In most cases, the effects due to irradiation were detected by measuring the capacity vs reverse voltage characteristics of the junctions. Negative space charge appears to be created by precipitation of lithium donors on irradiation defects. The relaxation time associated with this interaction is determined by a capture radius of (4±1) × 10−8 cm. In reversebiased junctions, space charge is neutralized by lithium-ion drift. This compensation process, also observed in lithium-diffused p-n junctions, is characterized by the ionic relaxation time. Expressions, relating both time constants to properties of the basic silicon, are given.
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