Recovery Behavior of Interface Traps After Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique

Abstract

We present an experimental study on the recovery feature of generated interface traps (N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">IT</sub> ) after the application of dc/ac negative-bias temperature instability (NBTI) stress in Si p-FinFETs using a fast direct-current current-voltage method. In addition to the delayed recovery that typically occurs after a 10-ms recovery time, the immediate recovery of N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> IT</sub> starting within a recovery time of 400 μs is observed, which is missing in the current reaction-diffusion model. In this study, this immediate recovery is systematically investigated under different stress modes and is attributed to the accumulation of H atoms. Furthermore, when the accumulated H atoms in a pulse-on phase are quickly consumed in the following pulse-off phase, a widely reported delayed recovery after Mode-B ac stress is observed.