Abstract
1060-nm VCSELs with low power dissipation and high reliability are demonstrated. We designed 1060-nm VCSELs with double intracavity structure to achieve high reliability and low power dissipation for the optical interconnection. We performed evaluations of an error-free 10-Gbps operation at low bias current, and the recorded low power dissipation per data rate of 0.14 mW/Gbps was achieved. Even though the modulation amplitude of the input signal was as small as 75 mVp-p, the extinction ratio of 6.5 dB was observed. From accelerating aging tests with 4898 devices, no random failure was observed, and high reliability of 30 failures in term (FITs)/channel with a confidence level of 90% was achieved.
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More From: IEEE Journal of Selected Topics in Quantum Electronics
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