Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs

Abstract

In this article, N-polar GaN-on-sapphire deep-recess metal–insulator–semiconductor (MIS)-high-electron-mobility transistors (HEMTs) with a breakthrough performance at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${W}$ </tex-math></inline-formula> -band are presented. Compared with prior N-polar GaN MIS-HEMTs, a thin GaN cap layer and atomic layer deposition (ALD) ruthenium (Ru) gate metallization were used along with high-quality GaN-on-sapphire epitaxy from Transphorm Inc. Before SiN passivation, 94 GHz large signal load–pull shows that the transistor obtains a record-high 9.65 dB linear transducer gain and demonstrated 42% power-added efficiency (PAE) with associated 4.4 W/mm of output power density at 12 V drain bias. By biasing the drain at 8 V, the device shows an even higher PAE of 44% with an associated 2.6 W/mm of output power density. After SiN passivation, the fabricated N-polar GaN-on-sapphire HEMTs show a high PAE of 40.2% with an associated 4.85 W/mm of output power density. Furthermore, a very high output power density of 5.83 W/mm with 38.5% PAE is demonstrated at a 14 V drain bias. This power performance shows significant efficiency improvement over previous N-polar GaN-on-SiC and demonstrates a combined efficiency and power density beyond what has been reported for Ga-polar devices, in spite of the low-thermal-conductivity sapphire substrate. This shows that N-polar GaN-on-sapphire technology is an attractive candidate for millimeter-wave power amplifier applications with simultaneous high efficiency and power density.