Abstract
In this letter, we have investigated the properties of In0.53Ga0.47As quantum-well (QW) metal–oxide–semiconductor field-effect-transistors (MOSFETs) on a 300-mm(100) Si wafer. We have explored the impact of scaling down In0.53Ga0.47As channel thickness ( $\text{t}_{\mathrm {ch}})$ from 15 to 5 nm. The fabricated devices show excellent electrostatic integrity, such as subthreshold-swing (SS) $\mu _{\textit {n$\_{}$eff}})$ of the fabricated devices to investigate the carrier transport properties of the InGaAs MOSFETs with different values of $\text{t}_{\mathrm {ch}}$ . The device with $\text{t}_{\mathrm {ch}} = 15$ nm displayed a value of $\mu _{\textit {n$\_{}$eff}} = 2,190$ cm2/V-s at room temperature. This valuewas found to decrease as $\text{t}_{\mathrm {ch}}$ was scaled down.
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