Reconstructions and phase transitions at semiconductor surfaces: Ge(111)

Abstract

First principles molecular dynamics studies of the low, intermediate, and high temperature phases of Ge(111) are reviewed. The atomic structure and electronic properties of the c(2 × 8) reconstruction, the diffusion of Ge adatoms at the c(2 × 8) → (1 × 1) disordering transition at T ∼ 300°C, and the behavior of Ge(111) close to the bulk melting temperature are discussed.