Reconstruction of the InSb (111)In surface as a result of sulfur adsorption

Abstract

The variation in reconstruction in the InSb (111)In surface during adsorption of sulfur and annealing in ultrahigh vacuum was investigated by methods of low-energy electron diffraction and Auger electron spectroscopy. It is shown that evolution of reconstruction of the InSb (111)In surface substantially depends on the starting thickness of the adsorbed S layer on the surface. If the thickness of the S layer is only slightly larger than that of the monolayer, reconstruction (1 × 1) is formed on the surface, which transforms into reconstruction (2 × 2) during the subsequent annealing. If the S layer is several monolayers thick, this layer is initially amorphous. Annealing of such a surface at 315–325°C can lead to the formation of reconstruction (√3 × √3)-R30°, which transforms into reconstruction (2 × 2) at a higher temperature. This reconstruction is retained during further annealing until the S atoms vanish from the surface completely. It is shown for the first time that the reconstruction (√3 × √3)-R30° can form during adsorption of chalcogenide atoms on the III–V (111)III surface.