Reconstruction of GaAs/AlAs supperlattice multilayer structure by quantification of AES and SIMS sputter depth profiles

H.L Kang,J.B Lao,Z.P Li,W.Q Yao,C Liu,J.Y Wang

doi:10.1016/j.apsusc.2015.09.201

Reconstruction of GaAs/AlAs supperlattice multilayer structure by quantification of AES and SIMS sputter depth profiles

H.L Kang, J.B Lao + Show 4 more

https://doi.org/10.1016/j.apsusc.2015.09.201

Copy DOI

Journal: Applied Surface Science	Publication Date: Sep 30, 2015
Citations: 5

Affiliation: Shantou University, Tsinghua University, Institute of Semiconductors, Chinese Academy of Sciences

#Depth Profiling Techniques #Secondary Ion Mass Spectroscopy + Show 8 more

Abstract
Full-Text
Similar Papers

Abstract

The GaAs/AlAs superlattice multilayer structures were deposited on GaAs (100) substrates by molecular beam epitaxial (MBE) technique. The as-prepared samples were characterized respectively by Auger Electron Spectroscopy (AES) and Secondary Ion Mass Spectroscopy (SIMS) depth profiling techniques. The measured depth profiles were then fitted by the Mixing-Roughness-Information (MRI) model. The depth resolution values for both depth profiling techniques were evaluated quantitatively from the fitted MRI parameters and the as-prepared GaAs/AlAs multilayer structure was determined accordingly.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Similar Papers

Paper Title

Journal

Date

Author

More From: Applied Surface Science

Paper Title

Journal

Date

Author

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.