Abstract
The photocurrent measurements in combination with a modulation of the depletion region is a method which has the potentiality to determine the diffusion length profile in semiconductors directly. In this article the method is applied to strongly compensated (Au-doped) silicon. The expressions for signal description are derived and the situations in which the reconstruction of the diffusion length profile can be obtained are presented. An example of diffusion length profile reconstruction is given for a structure highly compensated by Au and the profile obtained has been compared with that calculated in the frame of the kick-out mechanism with the help of secondary ion mass spectrometry experiments.
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