Abstract
In the present work, a novel device architecture Skin Deep Insulated Extension-RingFET (i.e. SDIE-RingFET) has been reported that incorporates the better known dielectric pocket in RingFET architecture. Various analog performance matrices like ION/IOFF, Vth roll off, Sub-threshold slope (SS), Device efficiency (gm/Ids), conduction band energy (CBE) and electron temperature (TE) have been studied to investigate the impact of Skin Deep Insulated Extension (SDIE) on RingFET architecture. Insulated extension enhances the immunity of the device against Short Channel Effects by reducing IOFF and providing a higher ION/IOFF ratio apart from improved threshold voltage roll-off. In addition, SDIE also prevents dopant diffusion from source/drain to bulk, thereby alleviating the bulk punch-through effect and hence DIBL.
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