Abstract
We propose a novel ESD protection device (GDNMOS: Gated Diode merged NMOS) fabricated with 28nm UTBB FD-SOI high-k metal gate technology. By modifying the combination of the diode and transistor gate stacks, the robustness of the device is optimized, achieving a maximum breakdown voltage (VBR) of 4.9V. In addition, modifications of the gate length modulate the trigger voltage (Vt1) with a minimum value of 3.5V. Variable electrostatic doping (gate-induced) in diode and transistor body enables reconfigurable operation. A lower doping of the base enhances the bipolar gain, leading to thyristor behavior. This innovative architecture demonstrates excellent capability for high-voltage protection while maintaining a latch-up free behavior.
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