Abstract
Ferroelectric engineered pn doping in two-dimensional (2D) semiconductors hold essential promise in realizing customized functional devices in a reconfigurable manner. Here, we report the successful pn doping in molybdenum disulfide (MoS2) optoelectronic device by local patterned ferroelectric polarization, and its configuration into lateral diode and npn bipolar phototransistors for photodetection from such a versatile playground. The lateral pn diode formed in this way manifests efficient self-powered detection by separating ~12% photo-generated electrons and holes. When polarized as bipolar phototransistor, the device is customized with a gain ~1000 by its transistor action, reaching the responsivity ~12 A W−1 and detectivity over 1013 Jones while keeping a fast response speed within 20 μs. A promising pathway toward high performance optoelectronics is thus opened up based on local ferroelectric polarization coupled 2D semiconductors.
Highlights
Ferroelectric engineered pn doping in two-dimensional (2D) semiconductors hold essential promise in realizing customized functional devices in a reconfigurable manner
With the rewritable FE polarization using a scanning atomic force microscope (AFM) tip, the MoS2 photoconductor is facile customized into pn diodes and bipolar phototransistors with optimal photodetection performance
An AFM image of the bare device 1 (Dev-1) with 2.4-nm-thick MoS2 transferred onto Cr/Au electrodes is shown in Fig. 1c (before spin coating the P(VDF-TrFE) layer)
Summary
Ferroelectric engineered pn doping in two-dimensional (2D) semiconductors hold essential promise in realizing customized functional devices in a reconfigurable manner. Given the selective pn doping of 2D materials, a variety of fundamental devices that enable the digital technology can be developed, for example, pn diodes and amplifying bipolar transistors[28,29] In optoelectronics, these devices based on pn junctions could manifest self-powered or fast and high gain photodetection beyond the usual photoconductors. With the rewritable FE polarization using a scanning atomic force microscope (AFM) tip, the MoS2 photoconductor is facile customized into pn diodes and bipolar phototransistors with optimal photodetection performance This allows us to demonstrate a lateral pn diode with an ideal factor of 1.7 for self-powered photodetection that separate ~12% photogenerated electrons and holes, and a npn bipolar phototransistor with a gain ~1000 with fine-adjusted pn polarization. Our study on reconfigurable optoelectronic devices using FE polarization unravels a pathway towards customizing novel functional optoelectronics based on 2D semiconductors
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
