Reconfigurable terahertz metamaterial device with pressure memory

Abstract

We demonstrate a liquid metal-based reconfigurable terahertz (THz) metamaterial device that is not only pressure driven, but also exhibits pressure memory. The discrete THz response is obtained by injecting eutectic gallium indium (EGaIn) into a microfluidic structure that is fabricated in polydimethylsiloxane (PDMS) using conventional soft lithography techniques. The shape of the injected EGaIn is mechanically stabilized by the formation of a thin oxide surface layer that allows the fluid to maintain its configuration within the microchannels despite its high intrinsic surface energy. Although the viscosity of EGaIn is twice that of water, the formation of the surface oxide layer prevents flow into a microchannel unless a critical pressure is exceeded. Using a structure in which the lateral channel dimensions vary, we progressively increase the applied pressure beyond the relevant critical pressure for each section of the device, enabling switching from one geometry to another (split ring resonator to closed ring resonator to an irregular closed ring resonator). As the geometry changes, the transmission spectrum of the device changes dramatically. When the external applied pressure is removed between device geometry changes, the liquid metal morphology remains unchanged, which can be regarded as a form of pressure memory. Once the device is fully filled with liquid metal, it can be erased through the use of mechanical pressure and exposure to acid vapors.