Reconfigurable TE-pass polarizer based on lithium niobate waveguide assisted by Ge2Sb2Te5 and silicon nitride.

Abstract

On-chip polarization management components play a critical role in tackling polarization dependence in the lithium-niobate-on-insulator (LNOI) platform. In this work, we proposed a reconfigurable TE-pass polarizer based on optical phase change material (GST) and the LNOI wafer. The key region is formed by a hybrid GST-S i 3 N 4 layer symmetrically deposited atop the centerline of the LNOI waveguide along the propagation direction where the GST is sandwiched in the middle of the S i 3 N 4 layer. Whether the polarizer will take effect depends on the phase states of the GST layer and the graphene and aluminum oxide layers are coated atop the G S T-S i 3 N 4 layer as the microheater to control the conversion of phase states. The proposed device length is 7.5µm with an insertion loss (IL)=0.22dB and extinction ratio (ER)=32.8dB at the wavelength of 1550nm. Moreover, it also has a high ER (>25d B) and a low IL (<0.5d B) in the operating bandwidth of 200nm. Such a high-performance TE-pass polarizer paves a new way for applications of photonics integrated circuits.