Reconfigurable Sensing‐Memory‐Processing and Logical Integration Within 2D Ferroelectric Optoelectronic Transistor for CMOS‐Compatible Bionic Vision

Abstract

AbstractNeuromorphic ferroelectric transistors integrating sensing and memory capabilities for photoelectric stimuli have provided a remarkable platform for multifunctional bionic vision. However, most hardware demonstrations utilizing ferroelectric transistors cannot implement multiple bio‐visual functions simultaneously under a small operating voltage with scalable material systems, which reduces the compatibility with complementary metal‐oxide‐semiconductor (CMOS) technology and blocks further bio‐visual applications. Herein, an optoelectronic transistor gated is constructed with ferroelectric LiNbO3, which exhibits sensing‐memory‐processing functions and logic integration simultaneously under a low operating voltage (≈1.5 V). Benefiting from the programmable photoinduction and strong ferroelectric polarization, the reliable and highly controllable synaptic characteristics and the bio‐visual selective learning behavior are successfully demonstrated. A high recognition accuracy (≈94.5%) in simulations is also achieved due to the unique linear synaptic plasticity. Furthermore, based on dual‐wavelength modulation, the full‐optical logics “AND” and “OR” are established within the same device. This work provides novel opportunities for the complex multifunctional bionic vision and toward large‐scale integration compatible with silicon‐based CMOS processes.