Abstract
Reconfigurable optical properties were studied in InGaN/GaN multiple quantum well (MQW) structures. It was observed that a short time exposure to a high intensity ultraviolet light results in long term, but reversible changes of the optical properties of InGaN/GaN MQW samples. The photoinduced changes can be observed using an optical microscope under low intensity ultraviolet light and are visible as a high contrast pattern. The retention time at room temperature for 12 and 20 MQW samples was longer than five days and four weeks, respectively. The effect was studied at room and cryogenic temperatures.
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