Abstract

In-memory computing is highly expected to break the von Neumann bottleneck and memory wall. Memristor with inherent nonvolatile property is considered to be a strong candidate to execute this new computing paradigm. In this work, we have presented a reconfigurable nonvolatile logic method based on one-transistor-two-memristor device structure, inhibiting the sneak path in the large-scale crossbar array. By merely adjusting the applied voltage signals, all 16 binary Boolean logic functions can be achieved in a single cell. More complex computing tasks including one-bit parallel full adder and set–reset latch have also been realized with optimization, showing simple operation process, high flexibility, and low computational complexity. The circuit verification based on cadence PSpice simulation is also provided, proving the feasibility of the proposed design. The work in this paper is intended to make progress in constructing architectures for in-memory computing paradigm.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call