Reconfigurable dielectric engineered WSe2/HZO mem-transistor

Abstract

Abstract Hybrid systems coupling 2D semiconductors with functional ferroelectrics are attracting increasing attention due to their excellent electronic/optoelectronic properties and new functionalities through the multiple heterointerface interaction. In our device architecture, interfacial states are introduced on the ferroelectric Hf0.5Zr0.5O2 thin film as gate dielectric layer for charge trapping effect. Utilizing the collaborative effects of charge trapping and ferroelectric polarization behavior, a multifunctional 2D WSe2/HZO memtransistor is demonstrated with ultra-low off-state (dark) current of 10-13 A, high on/off ratio of 106 and linear conductance update. This device exhibits reliable memory properties and tunable synaptic functions including short-term plasticity (STP)/ long-term plasticity (LTP), paired pulse facilitation (PPF), spike-timing dependent plasticity (STDP), synaptic potentiation/depression, and filtering in a single device. Extensive endurance tests ensure robust stability (1000 switching cycles, 2000 s holding time) and the synaptic weight update in the device exhibits excellent linearity. Based on the experimental data, our devices eventually achieve an accuracy of 94.8% in artificial neural network simulations. These results highlight a new approach for constructing hybrid systems coupling 2D semiconductors with functional ferroelectrics in a single device for tuning synaptic weight, optimizing circuit design, and building artificial neuromorphic computing systems.