Abstract

We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistor with a GaMnAs magnetic back-gate. Changing between different logic gate functions is realized by reorienting the magnetic moments of the magnetic layer, which induces a voltage shift on the Coulomb blockade oscillations of the MSET. We show that we can arbitrarily reprogram the function of the device from an n-type SET for in-plane magnetization of the GaMnAs layer to p-type SET for out-of-plane magnetization orientation. Moreover, we demonstrate a set of reprogrammable Boolean gates and its logical complement at the single device level. Finally, we propose two sets of reconfigurable binary gates using combinations of two MSETs in a pull-down network.

Highlights

  • As the downscaling of conventional CMOS technology is bound to reach its fundamental limit new algorithms will be the answer to achieve increasingly higher performance and reduced power consumption

  • The magnetic single-electron transistor (MSET) has two modes of operation: it responds to gate voltage inputs as well as to the orientation of the magnetic moments

  • By reorienting the magnetization of the GaMnAs substrate we are able to switch from n-type to p-type MSET

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Summary

Introduction

As the downscaling of conventional CMOS technology is bound to reach its fundamental limit new algorithms will be the answer to achieve increasingly higher performance and reduced power consumption. The reconfigurable capability of our MSET stems from the magnetization-dependent work function of GaMnAs back gate. Making use of the magnetic mode we demonstrate two sets of reprogrammable Boolean logic gates implemented at the single device level.

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