Abstract
We carried out transient optical absorption measurements of the conversion, induced by electron pulse irradiation, of the GaAs EL2 between the normal (EL20) and metastable (EL2*) states. It is found that no thermal barrier exists in the EL2* to EL20 conversion when induced by electron pulse irradiation and that the yield of the EL20 to EL2* conversion is much lower than that of the reverse conversion. These conversion processes were attributed to arise from the electron-hole recombination at the EL2.
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