Recombination rate constant of free electrons and holes in thin CdSe films

Abstract

The decay kinetics of electrons generated in thin CdSe films by laser pulse (wavelength 337 nm, pulse duration 8 ns) at 295 K was studied by the microwave photoconductivity method (36 GHz). Based on analysis of the photoresponse decay kinetics and the reactions of free and trapped electrons, holes, and ions, a model for the processes was proposed and the recombination rate constant of free electrons and holes in cadmium selenide was determined, being (4–6)· 10–11 cm3 s−1.