Abstract
In this study, the recombination rate and internal field efficiency of staggered InGaN/GaN quantum well lightemitting diodes with left and right steps were investigated using the multiband effective mass theory. The left step quantum well structure shows a larger optical matrix element than that of the right step quantum well structure. In addition, the heavy-hole effective mass around the uppermost valence band for the left step quantum well structure is slightly larger than that for the right step quantum well structure. Consequently, the staggered left step quantum well structure shows a much larger radiative recombination rate and internal quantum efficiency than that of the right step structure.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
