Abstract

Emission characteristics, spectral properties, and quantum efficiencies of AlxIn1−xSb light-emitting diodes, with aluminum compositions between 0% and 8.75%, have been investigated as a function of temperature from 25 to 300 K, and a function of current from 1 to 100 mA. As both current and temperature are varied a change in the dominant recombination mechanism is observed as indicated by changes in the measured emission. An analysis of the light-current characteristics shows that Auger processes become important in all devices at temperatures above 100 K, implying an activation energy of approximately 7–13 meV depending on the aluminum composition.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.