Abstract
To describe the recombination of charge carriers in Ge via localized states at dislocations a model is developed which accounts for the temperature dependence of measured lifetimes, incorporating at the same time all the features which have been deduced from electrical measurements. It is shown that electron capture occurs via tunnel states and that in hole capture two dislocation bands take part. Zur Beschreibung der Rekombination von Ladungstragern uber an Versetzungen lokalisierte Zustande wird ein Modell entwickelt, das die Temperaturabhangigkeit gemessener Lebensdauern erklart und zugleich alle aus elektrischen Messungen abgeleiteten Befunde umfast. Es wird gezeigt, das der Elektroneneinfang uber Tunnelzustande ablauft und das am Locheinfang zwei Versetzungsbander beteiligt sind.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
