Abstract
Electrical characterizations of Si/SiGe/Si double heterostructures grown by rapid thermal chemical vapour deposition (RTCVD) are carried out to determine the origin of the photoluminescence (PL) intensity decay at low growth temperature ( T G). For the sample grown at the highest T G, capacitance–voltage measurements show an excellent interface carrier confinement, while deep-level effects are not detected. For the sample grown at the lowest T G, carrier confinement is less efficient and deep-level transient spectroscopy indicates the presence of both point and extended defects. The apparent activation energy of the deep level related to point defects is close to the heterostructure midgap ( E a= E v+0.47 eV). As is shown, the deep level induces an effective non-radiative lifetime of carriers in the SiGe layer which is actually responsible for the SiGe layer photoluminescence degradation at low growth temperatures.
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