Abstract
AbstractTwo types of InAs quantum dash lasers grown on InP substrates with lasing wavelengths of 1.52 μm and 1.76 μm were studied. In both laser types the threshold current density, Jth, was about 2 kA/cm2 at room temperature and had a similar temperature sensitivity (T0 was about 80 K in the range T = 120–250 K, and T0 = 60–70 K from 250 to 300 K). Measurements of the spontaneous emission from a window milled in a substrate contact showed that Jrad, the radiative part of Jth, is almost temperature independent and less than 5% of Jth at T = 295 K, demonstrating that the relatively large value of Jth and its temperature sensitivity must be due to non‐radiative recombination processes. However, despite the similar temperature behaviour of the lasers, their pressure dependences were very different showing that in the 1.52 μm lasers, pressure independent defect related recombination outside the dashes due to thermal carrier spill‐over or thermal leakage dominates, while in the 1.76 μm quantum dash laser 60% of Jth is due to Auger recombination. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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