Recombination lifetime using the pulsed MOS capacitor

Abstract

The pulsed MOS capacitor is routinely used to measure the generation lifetime. A new technique is described here in which the same device is used to obtain the recombination lifetime. The measurement technique is identical to the commonly used pulsed C-t method except that the device is operated at an elevated temperature of 70- 100°C, where quasi-neutral current originating below the space-charge region dominates over space-charge region currents. The new technique, coupled with established techniques, makes possible the simultaneous determination of τ g and τ r .