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Abstract
The first example of a recombination enhanced defect reaction in InP is reported. The major defect E(0.79 eV) introduced by 1-MeV electron irradiation of p+n junctions, formed by Zn-doped epilayers on undoped n-type substrates, is not observed with Schottky barrier structures on similar material. The defect exhibits a reduction in activation energy of recovery from 1.3 eV under pure thermal annealing to 0.42 eV with minority-carrier (hole) injection. The enhanced reaction rate is proportional to the square of the injected current showing that the process results from two particle capture.
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