Abstract
AbstractThe effect of internal electric field on exciton localization in AlGaN‐based quantum wells (QWs) has been studied by means of time‐resolved photoluminescence (PL) spectroscopy. The observed time‐dependent PL was analyzed using rate equations, which enabled us to obtain the PL lifetime and the localization time of excitons for three QWs with different well‐layer thickness. The localization time became longer with increasing well‐layer thickness. This result indicated that a quantum confined Stark effect caused the reduction in transition probability of excitons from extended to localized states. In addition, the localization time decreased with increasing excitation density and the three QWs indicated almost the same localization time at higher excitation density. Since the alloy composition was the same for the three QWs, the degree of localization due to alloy disorder did not change so much. Therefore, the screening of the internal electric field resulted in the same localization time. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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