Abstract
The recombination dynamics of vapor-liquid-solid grown GaAs-nanowires with an axial p-n heterojunction is investigated by spatially and time-resolved photoluminescence spectroscopy. By scanning across the doping transition of single p-n and n-p doped nanowires, respectively, the particular influence of surface losses in differently doped areas is studied. We found a significantly reduced non-radiative recombination for the n-doped region compared to the p-doped one, which can be attributed to suppressed surface losses because of the characteristic band bending at the surface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.