Abstract
The relaxation dynamics of photoexcited charge carriers at the interface between InP and several metal ion solutions has been studied using picosecond time-resolved photoluminescence and electrochemical techniques. The results show that for p-InP, the controlling recombination process follows the nonradiative Shockley-Read-Hall (SRH) mechanism, while on the other hand, radiative bulk recombination is the controlling process in n-type crystals. The surface recombination velocities (SRV) of both conductivity types were found to be strongly dependent (varying over the range of 500 to 2 [times] 10[sup 5] cm/s) on the ionic solution composition and concentration. The SRV of the etched n-InP surface is retained and remains low when it is in contact with nonoxidizing ions like Zn[sup 2+] or Cr[sup 3+]. On the other hand, for n-InP, the SRV increases sharply when the crystal is dipped into stronger oxidizing species like Ag[sup +] (SRV = 1.4 [times] 10[sup 5] cm/s) or Cu[sup 2+] (SRV = 3.4 [times] 10[sup 42] cm/s). The electrochemical measurements provided firm evidence for chemisorbed-induced surface states in the case of the more strongly oxidizing solutions. 32 refs., 14 figs., 1 tab.
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