Abstract
We report a time-resolved study of the recombination dynamics in molecular beam epitaxy grown ZnO∕ZnMgO single quantum wells (SQWs) of 1.0–4.5nm width. The SQWs exhibit different emission properties, depending on both the well width and defect density. Stimulated emission has been achieved at room temperature in a separate confinement double heterostructure having a 3nm wide SQW as an active region. It has been found that a critical parameter for the lasing is the inhomogeneous broadening of both QW and barrier emission bands.
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