Abstract
The dependence of carrier lifetime in pure germanium upon injection level has been studied using a photoconductivity decay method. The data are analyzed in terms of the recombination theory for transient conditions including the case of high injection level. The results show that at least two recombination levels exist in pure germanium: one is active in n -type and the other in p -type. The recombination level in n -type germanium is at 0.28 eV from the conduction band and the cross section for capture of holes A p is about 4.7 times larger than that for capture of electrons A n . On the other hand, the recombination level in p -type germanium is at 0.25 eV from the valence band or 0.31 eV from the conduction band and A n / A p is about 9.8.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
